• Part: 2N5666
  • Description: NPN High Voltage Power Silicon Transistor
  • Manufacturer: VPT Components
  • Size: 670.52 KB
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Datasheet Summary

2N5664, 2N5665, 2N5666, 2N5667 NPN High Voltage Power Silicon Transistor Features - Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455 - 2N5664 and 2N5665 available in TO-66 package - 2N5666 and 2N5667 are available in both TO-5 and TO-39 packages - 2N5666 is available in the surface mount U3 version Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Breakdown Voltage Collector - Emitter Test Conditions IC = 10 mA dc, R1 = 100 Ω 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Symbol Units Min. Max. V(BR)CER V dc - 400 Breakdown Voltage Emitter - Base IE = 10 mA dc V(BR)EBO V dc - Collector - Emitter Cutoff...