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2N5664 - NPN High Voltage Power Silicon Transistor

Datasheet Summary

Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455.
  • 2N5664 and 2N5665 available in TO-66 package.
  • 2N5666 and 2N5667 are available in both TO-5 and TO-39 packages.
  • 2N5666 is available in the surface mount U3 version Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Breakdown Voltage Collector - Emitter Test Conditions IC = 10 mA dc, R1 = 100 Ω 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Symbol Unit.

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Datasheet Details

Part number 2N5664
Manufacturer VPT
File Size 670.52 KB
Description NPN High Voltage Power Silicon Transistor
Datasheet download datasheet 2N5664 Datasheet
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Other Datasheets by VPT
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Full PDF Text Transcription

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2N5664, 2N5665, 2N5666, 2N5667 NPN High Voltage Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF-19500/455 • 2N5664 and 2N5665 available in TO-66 package • 2N5666 and 2N5667 are available in both TO-5 and TO-39 packages • 2N5666 is available in the surface mount U3 version Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Breakdown Voltage Collector - Emitter Test Conditions IC = 10 mA dc, R1 = 100 Ω 2N5664, 2N5666, 2N5666S 2N5665, 2N5667, 2N5667S Symbol Units Min. Max. V(BR)CER V dc 250 — 400 Breakdown Voltage Emitter - Base IE = 10 mA dc V(BR)EBO V dc 6 — Collector - Emitter Cutoff Current VCE = 200 V dc 2N5664, 2N5666, 2N5666S VCE = 300 V dc 2N5665, 2N5667, 2N5667S ICES1 µA dc — 0.
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