2N5664 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5664 IC=10mA ; IB=0.3A CONDITIONS SYMBOL 2N5664 2N5665 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 V V(BR)EBO Emitter-base breakdown voltage Collector-emitter saturation voltage 2N5664 2N5665 VCEsat-1 0.4 IC=3A;.