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  Microsemi Electronic Components Datasheet  

2N6341 Datasheet

(2N6338 / 2N6341) NPN POWER SILICON TRANSISTOR

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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/509
Devices
2N6338
2N6341
TECHNICAL DATA
Qualified Level
JANTX
JANTXV
www.DataSheet4U.com
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation (1)
@ TA = +250C
@ TC = +1000C
VCEO
VCBO
VEBO
IB
IC
PT
Operating & Storage Junction Temperature Range Top, Tstg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 1.14 W/0C for TC = +250C and TC = +2000C
2N6338 2N6341
100 150
120 180
6.0
10
25
200
112
-65 to +175
Max.
0.875
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
2N6338
2N6341
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 50 Vdc
2N6338
ICEO
VCE = 75 Vdc
Collector-Emitter Cutoff Current
2N6341
VCE = 100 Vdc, VBE = 1.5 Vdc
2N6338
ICEX
VCE = 150 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
Collector-Base Cutoff Current
2N6341
IEBO
VCB = 120 Vdc
2N6338
ICEO
VCB = 180 Vdc
2N6341
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
100 Vdc
150
50 µAdc
10 µAdc
10
100 µAdc
10 µAdc
10
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6341 Datasheet

(2N6338 / 2N6341) NPN POWER SILICON TRANSISTOR

No Preview Available !

2N6338, 2N6341 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 10 Adc, VCE = 2.0 Vdc
IC = 25 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
IC = 25 Adc, IB = 2.5 Adc
Base-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 80 Vdc; IC = 10 Adc; IB = 1.0 Adc
Turn-Off Time
VCC = 80 Vdc; IC = 10 Adc; IB1 = IB2 = 1.0 Adc
Storage Time
VCC = 80 Vdc; IC = 10 Adc; IB1 = IB2 = 1.0 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 8.0 Vdc, IC = 25 Adc
Test 2
All Types
VCE = 14 Vdc, IC = 14 Adc
Test 3
All Types
VCE = 100 Vdc, IC = 100 mAdc
2N6338
VCE = 150 Vdc, IC = 66 mAdc
2N6341
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
ton
toff
ts
Min. Max. Unit
40
30 120
12
1.0 Vdc
1.8
1.8 Vdc
4.0 12
450
pF
0.5 µs
1.25 µs
1.0 µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N6341
Description (2N6338 / 2N6341) NPN POWER SILICON TRANSISTOR
Maker Microsemi Corporation
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2N6341 Datasheet PDF





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