2N6693 Datasheet | Microsemi

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 2N6678 2N6691 2N6693 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6676 2N6678 2N6691 2N6693 300 400 450 650 450 650 8.0 5.0 15 2N6676 2N6691 2N6678 2N6693 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6676, 2N6678 TO-3 (TO-204AA)- @ TA = 250C @ TC = 250C(1) Operating & Storage Junction Temperature Range Total Power Dissipation PT Top; Tstg Symbol RθJC W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.0 W/0C for TC > 250C 2) Derate linearly 34.2 m W/0C for TA > 250C 3) Derate linearly 17.1 m W/0C for TA > 250C 2N6691, 2N6693 TO-61- - See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 m Adc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = 1.5 Vdc VCE = 650 Vdc, VBE = 1.5 Vdc 2N6676, 2N6691 2N6678, 2N6693 2N6676, 2N6691 2N6678, 2N6693 V(BR)CEO 300 400 0.1 0.1 Vdc ICEX m Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6676, 2N6678, 2N6691, 2N6693 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 8.0 Vdc Collector-Base Cutoff Current VCB = 450 Vdc VCB = 650 Vdc Symbol IEBO 2N6676, 2N6691 2N6678, 2N6693 ICBO Min. Max. 2.0 1.0 1.0 Unit m Adc m Adc ON CHARACTERISTICS (4) Forward-Current Transfer Ratio IC = 1.0 Adc; VCE = 3.0 Vdc IC = 15 Adc; VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 15 Adc; IB = 3.0 Adc Base-Emitter Saturation Voltage IC = 15 Adc; IB = 3.0 Adc h FE VCE(sat) VBE(sat) 15 8.0 40 20 1.0 1.5 Vdc Vdc DYNAMIC CHARACTERISTICS Small...