2N669 - PNP germanium power transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N669
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	110.73 KB
Description	PNP germanium power transistors
Datasheet	2N669 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N6690	NPN POWER SILICON TRANSISTOR	Microsemi Corporation
2N6691	(2N66xx) NPN POWER SILICON TRANSISTOR	Microsemi Corporation
2N6693	(2N66xx) NPN POWER SILICON TRANSISTOR	Microsemi Corporation
2N6609	COMPLEMENTARY POWER TRANSISTORS	ON Semiconductor
2N6609	COMPLEMENTARY SILICON POWER TRANSITORS	Central Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N6603	HIGH FREQUENCY TRANSISTOR
2N6604	HIGH FREQUENCY TRANSISTOR
2N665	PNP Transistor
2N6667	DARLINGTON POWER TRANSISTORS
2N6668	DARLINGTON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifier applications. MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Collector Current (Continuous) Storage and Junction Temperature Total Device Dissipation (At 25'C Case Temperature) Thermal Resistance (Junction to Case) Symbol VCB VCES IC TJ, Tstg PD BJC Value 40 30 3.0 -65 to +100 90 0.8 Unit Vdc Vdc Amp 'c Watts 'C/W 2N669,2N176 gO-WATT - POWER DISSIPATION 25°C CASE ,MPfRATURE- r~ 5m, 1 OR LESS =- 2N176 2N669 do 0.5 D4 OJ 02 0.