• Part: 2N669
  • Description: PNP germanium power transistors
  • Manufacturer: Motorola Semiconductor
  • Size: 110.73 KB
Download 2N669 Datasheet PDF
2N669 page 2
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Datasheet Summary

176 2N (GERMANIUM) CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and mercial grade power amplifier applications. MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Collector Current (Continuous) Storage and Junction Temperature Total Device Dissipation (At 25'C Case Temperature) Thermal Resistance (Junction to Case) Symbol VCB VCES IC TJ, Tstg Value 40 30 3.0 -65 to +100 90 Unit Vdc Vdc Amp 'c Watts 'C/W 2N669,2N176 gO-WATT - POWER DISSIPATION 25°C CASE ,MPfRATURE- r~ 5m, OR LESS =- 2N176 2N669 do 0.5 D4 0.1 o COLLECTOR-EMITTER VOLTAGE...