The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for high-current, high-
speed power switching applications such as switching power sup-
plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,interface and line drivers. ,,,. 0 Fast Switching Speed — ton = toff = 5.0 ns Max
0 LOW an-Resistance
— 1.5 Ohm Typ — 2N66591MPF6659 2.0 Ohm Typ — 2N6660/2N6661 — MPF6660/MPF6661
o Low Drive Requirement, VGS(th) = 2.0 V Max
e Inherent Current Sharing Capability Permits Easy Paralleling of Many Devices
q
CASE79-02
TO-205AD (TO-391
q
Drain Curre@~~J-’
Continu*s (~)w
Puls@*2F’:*$ ,,:*,::,,”,...,.,,
“$,~<~$‘:ii,:t,4~?>.<,. ,*:,,~,....;.,.8.
ID IDM
2N6659 2N6660 2N6661
2.0 3.
2N6659 Datasheet
