2N6650
Description
2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range 0.25 100 0.571 1.75 -65 to +200 TO-3 2N6385 2N6650 80 80 Unit V V V A A W W/°C °C /W °C TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Darlington Power Transistor 2N6383-2N6385 2N6648-2N6650.
Key Features
- High Gain Dalington Performance
- DC Current Gain hFE = 3000(Typ) @ IC = 5.0A
- True Complementary Specifications
- RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx)
