APT100GT120JRDL Datasheet | Microsemi

1200V .. Resonant Mode IGBT® The Thunderbolt IGBT® used in this Resonant Mode bi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. Features - Low Conduction Loss - Low Gate Charge - Ultrafast Tail Current shutoff - Low forward Diode Voltage (VF) - Ultrasoft Recovery Diode - SSOA Rated - Ro HS pliant Typical Applications - Induction Heating ISOTOP ® "UL Recognized" file # E145592 - Welding - Medical - High Power Tele - Resonant Mode Phase Shifted Bridge Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current All Ratings: TC = 25°C unless otherwise specified. APT100GT120JRDL 1200 ±20 123 67 200 200A @ 1200V 570 -55 to 150 300 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5m A) Gate Threshold Voltage (VCE = VGE, IC = 4m A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Gate-Emitter Leakage Current (VGE = ±20V) Integrated Gate Resistor Min 1200 4.5...