Integrated Gate Resistor Low EMI, High Reliability.
RoHS Compliant
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. 27 -2 T SO
"UL Recognized"
file # E145592.
Full PDF Text Transcription for APT100GT120JRDQ4 (Reference)
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APT100GT120JRDQ4. For precise diagrams, and layout, please refer to the original PDF.
APT100GT120JRDQ4 1200V, 100A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Tech...
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w generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
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APT100GT120JRDQ4 Datasheet
