Download the APT100GT60B2RG datasheet PDF.
This datasheet also covers the APT100GT60B2R variant, as both devices belong to the same thunderbolt igbt family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low Forward Voltage Drop.
Low Tail Current.
Integrated Gate Resistor Low EMI, High Reliability.
RoHS Compliant
G E.
RBSOA and SCSOA Rated.
High Frequency Switching to 50KHz.
Ultra Low Leakage Current
G
C
E
G
C
E
C
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Colle.
Note: The manufacturer provides a single datasheet file (APT100GT60B2R_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for APT100GT60B2RG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APT100GT60B2RG. For precise diagrams, and layout, please refer to the original PDF.
APT100GT60B2R(G) www.DataSheet4U.com APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power ...
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IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
More Datasheets from Microsemi (now Microchip Technology)
APT100GT60B2RG Datasheet
