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APT106N60B2C6
600V 106A 0.035Ω
C O OLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON) • Low Miller Capacitance
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• Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Dual die (parallel) • Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C
1
All Ratings per die: TC = 25°C unless otherwise specified.
APT106N60B2C6 600 106 68 318 ±20 833 -55 - to 150 260 18.
APT106N60B2C6 Datasheet
