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APT18M80S - N-Channel MOSFET

Download the APT18M80S datasheet PDF. This datasheet also covers the APT18M80B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Fast switching with low EMI/RFI.
  • Low RDS(on).
  • Ultra low Crss for improved noise immunity.
  • Low gate charge.
  • Avalanche energy rated.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APT18M80B_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
APT18M80B APT18M80S 800V, 19A, 0.53Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaciwww.DataSheet4U.net tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.