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  Microsemi Electronic Components Datasheet  

APT35GA90B Datasheet

High Speed PT IGBT

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APT35GA90B
APT35GA90S
900V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
TO-247
APT35GA90S
D3PAK
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT35GA90B
when switching at high frequency.
Single die IGBT
FEATURES
• Fast switching with low EMI
• Very Low Eoff for maximum efciency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efciency industrial
Absolute Maximum Ratings
Symbol Parameter
Vces Collector Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2 Continuous Collector Current @ TC = 100°C
ICM Pulsed Collector Current 1
VGE Gate-Emitter Voltage 2
www.DataShPeDet4U.coTmotal Power Dissipation @ TC = 25°C
SSOA Switching Safe Operating Area @ TJ = 150°C
TJ, TSTG Operating and Storage Junction Temperature Range
TJ Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Ratings
900
63
35
105
±30
290
105A @ 900V
-55 to 150
300
Static Characteristics
Symbol Parameter
TJ = 25°C unless otherwise specied
Test Conditions
Min
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
VGE = 15V,
IC = 18A
TJ = 25°C
TJ = 125°C
VGE =VCE , IC = 1mA
VCE = 900V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
900
3
Thermal and Mechanical Characteristics
Symbol
RθJC
WT
Torque
Characteristic
Junction to Case Thermal Resistance
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
-
Typ
2.5
2.2
4.5
Typ
-
5.9
Max
3.1
6
250
1000
±100
Max
0.43
-
10
Unit
V
A
V
W
°C
Unit
V
μA
nA
Unit
°C/W
g
in·lbf
Microsemi Website - http://www.microsemi.com


  Microsemi Electronic Components Datasheet  

APT35GA90B Datasheet

High Speed PT IGBT

No Preview Available !

Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT35GA90B_S
Symbol
Cies
Coes
Cres
Qg3
Qge
Qgc
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate- Collector Charge
SSOA
td(on)
tr
td(off)
tf
Eon2
E6
off
td(on
tr
td(off)
tf
Eon2
E6
off
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
Gate Charge
VGE = 15V
VCE= 450V
IC = 18A
TJ = 150°C, RG = 10Ω4, VGE = 15V,
L= 100uH, VCE = 900V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 18A
RG = 10Ω4
TJ = +25°C
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 18A
RG = 10Ω4
TJ = +125°C
Min
105
Typ
1934
173
28
84
14
34
12
15
104
86
642
382
11
14
154
144
1044
907
Max
Unit
pF
nC
A
ns
μJ
ns
μJ
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
www.DataSheet4U.com



Part Number APT35GA90B
Description High Speed PT IGBT
Maker Microsemi Corporation
Total Page 6 Pages
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