APT35GA90S Datasheet High Speed PT IGBT

Manufacturer: Microsemi (now Microchip Technology)

Download the APT35GA90S datasheet PDF. This datasheet also includes the APT35GA90B variant, as both parts are published together in a single manufacturer document.

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APT35GA90S high speed pt igbt by Microsemi (now Microchip Technology) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (APT35GA90B_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	APT35GA90S
Manufacturer	Microsemi (now Microchip Technology)
File Size	245.38 KB
Description	High Speed PT IGBT
Datasheet	APT35GA90S Datasheet

Overview

APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.

Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes.

A reduced Eoff VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies.

Key Features

Fast switching with low EMI.
Very Low Eoff for maximum efﬁciency.
Ultra low Cres for improved noise immunity.
Low conduction loss.
Low gate charge.
Increased intrinsic gate resistance for low EMI.
RoHS compliant.

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