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APT35GA90B Datasheet High Speed PT IGBT

Manufacturer: Microsemi (now Microchip Technology)

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Overview

APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.

Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes.

A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.

Key Features

  • Fast switching with low EMI.
  • Very Low Eoff for maximum efficiency.
  • Ultra low Cres for improved noise immunity.
  • Low conduction loss.
  • Low gate charge.
  • Increased intrinsic gate resistance for low EMI.
  • RoHS compliant.

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