rf & microwave discrete low power transistors.
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*
* High Current-Gain
– Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
Low Noise Figure
– NF = 2.4 dB (typ) @ f = 0.5 G.
requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Em.
Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Ba.
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