Datasheet4U Logo Datasheet4U.com

BFR90G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Download the BFR90G datasheet PDF. This datasheet also covers the BFR90 variant, as both devices belong to the same rf & microwave discrete low power transistors family and are provided as variant models within a single manufacturer datasheet.

Description

Designed primarily for use in high-gain, low noise, small-signal amplifiers.

applications requiring fast switching times.

Features

  • High Current-Gain.
  • Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure.
  • NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain.
  • Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BFR90_AdvancedPowerTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BFR90G
Manufacturer Advanced Power Technology
File Size 153.50 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet download datasheet BFR90G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFR90 Silicon NPN Planar RF Transistor Vishay Telefunken
BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation
BFR90 HIGH FREQUENCY TRANSISTOR Motorola
BFR90A Silicon NPN Planar RF Transistor Vishay
BFR90A Silicon NPN Planar RF Transistor TEMIC Semiconductors

Other Datasheets by Advanced Power Technology

Part Number Description
BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFR91G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
BFR96G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Full PDF Text Transcription

Click to expand full text
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) www.DataSheet4U.com Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.
Published: |