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BFR90 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Designed primarily for use in high-gain, low noise, small-signal amplifiers.

applications requiring fast switching times.

Key Features

  • High Current-Gain.
  • Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure.
  • NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain.
  • Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2).

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Other Datasheets by Microsemi (now Microchip Technology)

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BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate above 60ºC 180 2.