Datasheet Summary
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
3 collector currents from 1 mA to 20 mA
f T = 9 GHz
F = 1.0 dB at 1 GHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949T
Maximum Ratings Parameter
Marking RKs 1=B
Pin Configuration 2=E 3=C
Package SC75
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 10 20 20 1.5 70 7 250 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 75°C 1) Junction temperature Ambient temperature Storage temperature mA mW...