Datasheet Summary
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
3 1 2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949L3
Maximum Ratings Parameter
Marking RK
1=B
Pin Configuration 2=E 3=C
Package TSLP-3-1
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 100°C 1) Junction temperature Ambient temperature Storage...