Datasheet Summary
BFR949F
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz
3 1
F = 1 dB at 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR949F
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 93°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction
- soldering point2)
Marking RKs
Pin Configuration 1=B 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS
3=C
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