BFR91 Datasheet | Microsemi

Features - - - High Current-Gain - Bandwidth Product, f T = 5 GHz (typ) @ IC = 30 m A Low Noise Figure - NF = 1.9 d B (typ) @ f = 0.5 GHz, 2.5 d B (typ) @ 1GHz High Power Gain - Gmax = 16 d B (typ) @ f = 0.5 GHz, 10.9d B (typ) @ 1GHz Macro T (STYLE #2) DESCRIPTION : Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 15 3.0 35 Unit Vdc Vdc Vdc m A Thermal Data D Total Device Dissipation @ TA = 60ºC Derate above 60ºC Storage Temperature -65 to +150 ºC ºC/W Total Device Dissipation @ TA = 60ºC Derate above 60ºC 180 2.0 m Watts m W/ ºC Tstg R θJA MSC1308.PDF 10-25-99 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 m Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 m Adc, IC = 0) Collector Cutoff Current (VCB = 5.0 Vdc, VBE = 0 Vdc) 12 15 3.0 Value Typ. Max. 50 Unit Vdc Vdc Vdc n A (on) HFE DC Current Gain (IC = 30 m Adc, VCE = 5.0 Vdc) 25 250 - DYNAMIC Symbol Ftau CCB Test Conditions Min. Current-Gain - Bandwidth Product (IC = 30 m A, VCE = 5.0 Vdc, f = 0.5 GHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Value Typ. 5.0 0.7 Max. 1.0 Unit GHz p F MSC1308.PDF 10-25-99 FUNCTIONAL Symbol Test Conditions Min. NF Noise Figure (IC = 2.0 m Adc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 2.0 m Adc, VCE = 5.0 Vdc, f = 1.0 GHz) Power Gain at Optimum Noise Figure (IC = 2.0 m Adc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 2.0 m Adc, VCE = 5.0 Vdc, f = 1.0 GHz) Insertion Gain (IC = 30 m Adc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 30 m Adc, VCE = 5.0 Vdc, f = 1.0 GHz) Maximum Stable Gain (IC = 30 m Adc, VCE = 5.0 Vdc, f = 0.5 GHz) (IC = 30 m Adc, VCE = 5.0 Vdc, f = 1.0...