Advanced Power Technology BFR91
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | BFR91 |
|---|---|
| Datasheet | BFR91 Download |
| Manufacturer |  Advanced Power Technology |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA● Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
● High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz Macro T (STYLE #2)
DESCRIPTION
: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TA = 60ºC Derate above 60ºC Storage Temperature RθJA Total Device Dissipation @ TA = 60ºC Derate above 60ºC Value 12 15 3.0 35 180 2.0 -65 to +150 500 Unit Vdc Vdc Vdc mA mWatts mW/ ºC ºC ºC/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. Rev A 9/2005 ELECTRICAL...
