BFR91 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	BFR91
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	81.91 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	BFR91 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BFR91	Silicon NPN Planar RF Transistor	Vishay Telefunken
BFR91	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Microsemi Corporation
BFR91	NPN Silicon High-Frequency Transistor	PLANETA
BFR91	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Advanced Power Technology
BFR91A	Silicon NPN Planar RF Transistor	Vishay Telefunken

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
BFR90	HIGH FREQUENCY TRANSISTOR
BFR92	RF TRANSISTOR
BFR92S	RF TRANSISTOR
BFR93	RF TRANSISTOR
BFR93S	RF TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Ta = 60°C Derate above 60°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol vCEO VCBO v EBO ic PD TstQ Symbol R 0JA Value 12 15 3.0 35 180 2.0 -65 to +150 Max 500 Unit Vdc Vdc Vdc mAdc mW mW/°C "C Unit °C/W BFR91 CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON j*C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC - 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, l£ = 0) Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0) Collector Cutoff Current (VCB = 5.0.