Microsemi BFR91
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
FEATURES
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● High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz Macro T (STYLE #2)
DESCRIPTION
: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 15 3.0 35 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate above 60ºC Storage Temperature -65 to +150 ºC ºC/W Total Device Dissipation @ TA = 60ºC Derate above 60ºC 180 2.0 mWatts mW/ ºC Tstg R θJA 500 MSC1308.PDF 10-25-99 BFR91ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collect...