BFR96
BFR96 is RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS manufactured by Microsemi.
Features
- -
- High Current-Gain
- Bandwidth Product, f T = 4.5 GHz (typ) @ IC = 50 m A
Low Noise Figure
- NF = 2.4 d B (typ) @ f = 0.5 GHz
High Power Gain
- Gmax = 14.5d B (typ) @ f = 0.5 GHz
Macro T
(STYLE #2)
DESCRIPTION
: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 100 Unit Vdc Vdc Vdc m A
Thermal Data
D Total Device Dissipation @ TC = 100ºC Derate above 100ºC 500 10 m Watts m W/ ºC
MSC1309.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 m Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 m Adc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, VBE = 0 Vdc) 15 20 3.0 Value Typ. Max. 100 Unit Vdc Vdc Vdc n A
(on)
HFE DC Current Gain (IC = 50 m Adc, VCE = 10 Vdc) 30 200
- DYNAMIC
Symbol Ftau CCB Test Conditions Min. Current-Gain
- Bandwidth Product (IC = 50 m A, VCE = 10 Vdc, f = 0.5 GHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Value Typ. 5.0 2.6 Max. 3.2 Unit GHz p F
MSC1309.PDF 10-25-99
FUNCTIONAL
Symbol Test Conditions Min. NF |S21|
Value Typ. 2.0 Max. Unit d B
Noise Figure (IC = 10 m Adc, VCE = 10 Vdc, f = 0.5 GHz) Insertion Gain (IC = 50 m Adc, VCE = 10 Vdc, f = 0.5 GHz) Maximum Stable Gain (IC = 50 m Adc, VCE = 10 Vdc, f = 0.5 GHz) Maximum Unilateral Gain (1) (IC = 50 m Adc, VCE = 10 Vdc, f = 0.5 GHz)
- 12
- d B
- 16.5
- d B
U...
