BFR96 - N-P-N bipolar silicon RF transistor

Datasheet Details

Part number	BFR96
Manufacturer	ETC
File Size	42.80 KB
Description	N-P-N bipolar silicon RF transistor
Datasheet	BFR96 Datasheet
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www.DataSheet4U.com BFR96 N-P-N bipolar silicon RF transistor in plastic package SOT-37 5.2max 5.5max 1.5max 9.0max 1.0max 1 5.5max 2 3 Pinouts: 1- Base, 2- Collector, 3-Emitter Ratings Symbol VCBO VCEO VEBO IC Ptot Parameter, unit Collector- base voltage, V Collector- emitter voltage, V Emitter- base voltage, V Collector current, mA Power dissipation, mW Limits 20 15 3 75 700 Characteristics (T A = 25°C) Symbol fT hFE ICBO GPS F CC Parameter, unit, test conditions Transition frequency, GHz, IE=50mA, VCB=10V DC current gain, IE=50mA, VCB=10V Collector cut-off current, nA, IE= 0mA, VCB=10V Power gain, dB, IE=50mA, VCE=10V, f=500MHz Noise figure, dB IE=50mA, VCE=10V, f=500MHz Collector capacitance, pF, VCB=10V, f= 1MHz Limits min max 3.2 50 100 13.0 4.0 2.

Published: Oct 9, 2007 |