BFR92W Datasheet | Siemens Semiconductor Group

BFR 92W NPN Silicon RF Transistor - For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 m A to 20 m A - plementary type: BFT 92W (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 92W P1s Q62702-F1488 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 2.5 30 4 m W 280 150 - 65 ... + 150 - 65 ... + 150 ≤ 230 °C m A Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 86 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point Rth JS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group Dec-10-1996 BFR 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V µA 10 n A 100 µA 100 40 200 IC = 1 m A, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO h FE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 m A, VCE = 8 V Semiconductor Group Dec-10-1996 BFR 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit f...