BFR93AT
BFR93AT is NPN Silicon RF Transistor manufactured by Infineon.
NPN Silicon RF Transistor Preliminary data
For low distortion broadband amplifiers and
3 oscillators up to 2 GHz at collector currents from 5 m A to 30 m A
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR93AT
Maximum Ratings Parameter
Marking R2s
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 50 6 300 150 m W °C m A Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 85°C 1) Junction temperature Ambient temperature Storage temperature
-65 ... 150 -65 ... 150
Thermal Resistance Junction
- soldering point 2) Rth JS
215
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance th JA
Aug-09-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 m A, VCE = 8 V h FE 50 100 200 IEBO 10 µA ICBO 100 n A ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
Aug-09-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 30 m A, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 m A, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 m A, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz IC = 30 m A, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8...
