BFR92P Datasheet | Infineon

Low Noise Silicon Bipolar RF Transistor - For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 m A to 20 m A - Pb-free (Ro HS pliant) package - Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR92P Marking Pin Configuration GFs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 93 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 15 20 20 2.5 45 4 280 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) Rth JS 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of Rth JS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V m A m W °C Unit K/W 1 2013-11-21 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 15 m A, VCE = 8 V, pulse measured V(BR)CEO 15 -...