BFR92AT
Key Features
- High power gain
- Gold metallization ensures excellent reliability
- SOT416 (SC-75) package. APPLICATIONS RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR92AT uses the same crystal as the SOT23 version: BFR92A. PINNING PIN 1 2 3 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 75 °C; note 1 IC = 15 mA; VCE = 10 V IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C F Tj Note
- Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt open emitter open base CONDITIONS MIN. - - - - 40 - 3.5 - - - - TYP. - - - - 90 0.35 5 14 8 2 - base emitter collector DESCRIPTION Marking code: P2. fpage BFR92AT 3 1 Top view 2 MBK090 Fig.1 SOT416. MAX. 20 15 25 150 - - - - - - 150
