NXP Semiconductors BFR92AT
The BFR92AT uses the same crystal as the SOT23 version: BFR92A.FEATURES
● High power gain● Gold metallization ensures excellent reliability
● SOT416 (SC-75) package.
APPLICATIONS
RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz.DESCRIPTION
Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. PINNING PIN 1 2 3 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 75 °C; note 1 IC = 15 mA; VCE = 10 V IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt open emitter open base CONDITIONS MIN. − − − − 40 − 3.5 − − − − TYP. − − − − 90 0.35 5 14 8 2 − base emitter collectorDESCRIPTION
Marking code: P2. fpage BFR92AT 3 1 Top view 2 MBK090 Fig.1 SOT416.