NXP Semiconductors BFR93AW
The BFR93AW uses the same crystal as the SOT23 version, BFR93A.FEATURES
● High power gain● Gold metallization ensures excellent reliability
● SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz.DESCRIPTION
Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. PINNING PINDESCRIPTION
1 base 2 emitter 3 collector handbook, 2 columns 3 12 Top view MBC870 Marking code: R2. Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE Cre fT GUM F Tj collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure junction temperature open emitter open base up to Ts = 93 C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C IC = 5 mA; VCE = 8 V; f = 1 GHz; s = opt Note 1.