Infineon Technologies BFR93AW
Low Noise Silicon Bipolar RF Transistor
| Part No. | BFR93AW |
|---|---|
| Datasheet | BFR93AW Download |
| Manufacturer |  Infineon Technologies |
| Description | Low Noise Silicon Bipolar RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 108 °C Junction temperature Ambient temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA 12 20 20 2 90 9 300 150 -65 ... 150 Storage temperature TStg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 140 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-04 BFR93AWELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current...
