Siemens BFR93AW
NPN Silicon RF Transistor
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 Q62702-F1489 1=B 2=E 3=C Package SOT-323 Unit V VCEO VCES VCBO VEBO IC IB Ptot mA mW TS ≤ 104 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) 300 Tj TA Tstg RthJS 150 - 65 ... + 150 - 65 ... + 150 ≤ 155 °C K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 93AWELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0...