NXP Semiconductors BFR93
NPN 5 GHz wideband transistor
| Part No. | BFR93 |
|---|---|
| Datasheet | BFR93 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● Very low intermodulation distortion● High power gain
● Excellent wideband properties and low noise up to high frequencies due to its very high transition frequency.
APPLICATIONS
● RF wideband amplifiers and oscillators. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM F dim PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain noise figure intermodulation distortion Ts ≤ 95 °C IC = 2 mA; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz; Tj = 25 °C IC = 30 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C IC = 30 mA; VCE = 5 V; RL = 75 Ω; VO = 300 mV; fp + fq − fr = 493.25 MHz; Tamb = 25 °C open emitter open base CONDITIONS − − − − 0.8 5 16.5 1.9 −60 TYP.DESCRIPTION
NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
page BFR93 3 1 Top view Marking code: R1p.
