BFR93 Datasheet PDF

MAXIMUM RATINGS

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO v EBO ic THERMAL CHARACTERISTICS Characteristic Symbol *Totai Device Dissipation, T/\ = 25°C Derate above 25°C PD Storage Temperature Tstg 'Thermal Resistance Junction to Ambient RftJA
●Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 12 15 2.0 25 Max 350 2.8 150 357 Unit . Vdc Vdc Vdc mAdc Unit mW mwrc °C °C/W BFR93.S CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mA) Collector-Base Breakdown Voltage 0C = 10 mA) Emitter-Base Breakdown Voltage E(l = 100 *iA) _____ Collector Cutoff Current (VCE = 10 V) Collector Cutoff Current (VCB = 10 V) Emitter Cutoff Current (VEB = 1.0 V) ON CHARACTERISTICS DC Current Gain c(l = 1.0 mA, Vce = 5.0 V) c(l = 20