• Part: BFR92AW
  • Description: Silicon NPN Planar RF Transistor
  • Category: Transistor
  • Manufacturer: Vishay
  • Size: 163.43 KB
Download BFR92AW Datasheet PDF
Vishay
BFR92AW
BFR92AW is Silicon NPN Planar RF Transistor manufactured by Vishay.
Features D High power gain D Low noise figure D High transition frequency 1 1 13 581 94 9280 9510527 13 581 BFR92A Marking: +P2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR92AR Marking: +P5 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 13 652 13 570 BFR92AW Marking: WP2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Document Number 85033 Rev. 3, 20-Jan-99 .vishay.de - Fax Back +1-408-970-5600 1 (10) BFR92A/BFR92AR/BFR92AW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 200 150 - 65 to +150 Unit V V V m A m W °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth JA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 m A, IB = 0 VCE = 10 V, IC = 14 m A Symbol Min Typ Max Unit ICES 100 m A ICBO 100 n A IEBO 10 m A V(BR)CEO 15 V h FE 65 100 150 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Linear output voltage - two tone intermodulation test Third order intercept point Test Conditions VCE = 10 V, IC = 14 m A, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 10 V, IC = 2 m A, ZS = 50 W, f = 800 MHz VCE = 10 V,...