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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
BFR92A
DESCRIPTION ·Low Noise and High Gain
NF = 1.3 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain ︱S21e︱2 = 11.5 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
100
mA
0.2
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
isc website:www.iscsemi.