Low Noise and High Gain NF = 1.3 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High Power Gain ︱S21e︱2 = 11.5 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| BFR92AW | Vishay | Silicon NPN Planar RF Transistor |
| BFR92P | Siemens Semiconductor Group | NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
| BFR92 | TT Electronics | SMALL SIGNAL NPN RF TRANSISTOR |
| BFR92S | Motorola Semiconductor | RF TRANSISTOR |
| BFR92W | Siemens Semiconductor Group | NPN Silicon RF Transistor |
| BFR93P | Siemens Semiconductor Group | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
| BFR96 | Microsemi | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| BFR97 | SGS | Small Signal Transistor |
| BFR93S | Motorola Semiconductor | RF TRANSISTOR |
| BFR93A | Unisonic Technologies | ISC SILICON NPN RF TRANSISTOR |
