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BFR93A Datasheet Silicon NPN Rf Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN RF Transistor.

General Description

·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in RF wideband amplifiers and oscillators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 20 V 20 V 12 V 2 V 50 mA 6 mA 0.3 W 150 ℃ -65~150 ℃ BFR93A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR93A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;

BFR93A Distributor