BFR93A Datasheet and Specifications PDF

The BFR93A is a Low Noise Silicon Bipolar RF Transistor.

Key Specifications

PackageSOT
Mount TypeSurface Mount
Pins3
Max Frequency6 GHz
Height1 mm
Length2.9 mm
Width1.3 mm
Max Operating Temp150 °C
Datasheet4U Logo
Part NumberBFR93A Datasheet
ManufacturerInfineon
Overview Low Noise Silicon Bipolar RF Transistor • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Pb-free (RoHS compliant) package • Qualification report according to . ulation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR93A Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collect.
Part NumberBFR93A Datasheet
DescriptionNPN 6 GHz wideband transistor
ManufacturerNXP Semiconductors
Overview NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. lfpage 3 APPLICATIONS  RF wideband amplifiers and oscillators. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 1 T.
* High power gain
* Low noise figure
* Very low intermodulation distortion. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. lfpage 3 APPLICATIONS
* RF wideband amplifiers and oscillators. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Top view 2 .
Part NumberBFR93A Datasheet
DescriptionSilicon NPN Planar RF Transistor
ManufacturerVishay
Overview BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Feature. D High power gain D High transition frequency D Low noise figure 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFR93A Marking: +R2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR93AR Marking: +R5 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 13 570 2 3 .
Part NumberBFR93A Datasheet
DescriptionNPN Silicon RF Transistor
ManufacturerSiemens Semiconductor Group
Overview BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive d. acteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V.

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