BFR93P
BFR93P is NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) manufactured by Siemens Semiconductor Group.
NPN Silicon RF Transistor q q
BFR 93P
For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 m A to 30 m A. CECC-type available: CECC 50002/256.
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFR 93P Marking GG Ordering Code (tape and reel) Q62702-F1051 Pin Configuration 1 2 3 B E C Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS ≤ 65 ˚C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction
- ambient 2) Junction
- soldering point 3) Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj TA Tstg
Values 15 20 2.5 50 10 280 150
- 65 … + 150
- 65 … + 150
Unit V m A m W ˚C
385 305
K/W
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFR 93P
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 25 m A, VCE = 5 V Collector-emitter saturation voltage IC = 50 m A, IB = 5 m A V(BR)CE0 ICB0
- - IEB0 h FE VCEsat
- 30
- -
- - 100 0.2 0.05 10 100
- 0.5
- V 15
- - V
µA
Values typ. max.
Unit
BFR...
