| Part Number | BFR93AT Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | BFR93AT NPN Silicon RF Transistor Preliminary data For low distortion broadband amplifiers and 3 oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic . erwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 20. |
BFR93AT Datasheet and Specifications PDF
The BFR93AT is a NPN Silicon RF Transistor.
Key Specifications
| Mount Type | Surface Mount |
|---|---|
| Pins | 3 |
| Max Frequency | 6 GHz |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BFR93AT Datasheet |
|---|---|
| Description | NPN 5 GHz wideband transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT uses the same die as the SOT23 version: BFR93A. PINNING PIN 1 2 3 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE.
* High power gain * Gold metallization ensures excellent reliability * SOT416 (SC-75) package. APPLICATIONS Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. The BFR93AT . |