NXP Semiconductors BFR93AT
The BFR93AT uses the same die as the SOT23 version: BFR93A.| Part No. | BFR93AT |
|---|---|
| Datasheet | BFR93AT Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 5 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● Gold metallization ensures excellent reliability
● SOT416 (SC-75) package.
APPLICATIONS
Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz.DESCRIPTION
Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. PINNING PIN 1 2 3 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 75 °C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz f = 2 GHz F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt − − − − 13 8 1.5 − open base CONDITIONS open emitter MIN. − − − − 40 − 4 TYP. − − − − 90 0.6 5 base emitter collectorDESCRIPTION
Marking code: R2. fpage BFR93AT 3 1 Top view 2 MBK090 Fig.1 SOT416.
