BFR93AW Datasheet | Infineon

Low Noise Silicon Bipolar RF Transistor - For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 m A to 30 m A - Pb-free (Ro HS pliant) and halogen-free package with visible leads - Qualification report according to AEC-Q101 available 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR93AW Marking Pin Configuration R2s 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 108 °C Junction temperature Ambient temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA 12 20 20 2 90 9 300 150 -65 ... 150 Storage temperature TStg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) Rth JS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of Rth JS please refer to Application Note AN077 (Thermal Resistance...