BFR93AW
BFR93AW is NPN Silicon RF Transistor manufactured by Siemens Semiconductor Group.
BFR 93AW
NPN Silicon RF Transistor
- For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 m A to 30 m A
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 93AW R2s Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 Q62702-F1489 1=B 2=E 3=C
Package SOT-323
Unit V
VCEO VCES VCBO VEBO IC IB Ptot m A m W
TS ≤ 104 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
1)
Tj TA Tstg Rth JS
- 65 ... + 150
- 65 ... + 150 ≤ 155
°C
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
Dec-11-1996
BFR 93AW
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100
- V µA 100 n A 100 µA 10 50 200
IC = 1 m A, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO h FE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE =...
