| Part Number | BFR93AW Datasheet |
|---|---|
| Manufacturer | Vishay |
| Overview | BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Feature. D High power gain D High transition frequency D Low noise figure 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFR93A Marking: +R2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR93AR Marking: +R5 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 13 570 2 3 . |
BFR93AW Datasheet and Specifications PDF
The BFR93AW is a Silicon NPN Planar RF Transistor.
Key Specifications
| Package | SOT |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BFR93AW Datasheet |
|---|---|
| Description | NPN 5 GHz wideband transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.
PINNING
PIN DESCRIPTION 1 base 2 emitter 3 collector
handbook.
* High power gain * Gold metallization ensures excellent reliability * SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The. |
| Part Number | BFR93AW Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe. stics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC =. |
| Part Number | BFR93AW Datasheet |
|---|---|
| Description | Low Noise Silicon Bipolar RF Transistor |
| Manufacturer | Infineon |
| Overview | Low Noise Silicon Bipolar RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA • Pb-free (RoHS compliant) and halogen-free package with vi. 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-04 BFR93AW Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter break. |