BFR90A Datasheet PDF - TEMIC Semiconductors Silicon NPN Planar RF Transistor Specs

BFR90A - Silicon NPN Planar RF Transistor

Datasheet Summary

Features

D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150.
65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistan.

Datasheet Details

Part number	BFR90A
Manufacturer	TEMIC Semiconductors
File Size	70.02 KB
Description	Silicon NPN Planar RF Transistor
Datasheet	BFR90A Datasheet
Additional preview pages of the BFR90A datasheet.

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Full PDF Text Transcription

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BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150 –65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu Symbol RthJA Value 300 Unit K/W TELEFUNKEN Semiconductors Rev.

Published: Mar 23, 2005 |