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MRF951 Datasheet RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacturer: Microsemi (now Microchip Technology)

General Description

: Designed for use in high gain, low noise small-signal amplifiers.

DataSheet4U.com ee DataSh ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 20 1.5 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC .475 Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC Watts Tstg TJmax DataSheet4U.com MSC1326.PDF 10-25-99 DataSheet 4 U .com www.DataSheet4U.com MRF951 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO ICBO IEBO Test Conditions Min.

Collector-Emitter Breakdown Voltage (IC = 0.1 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 10 Vdc, VBE = 0 Vdc) Collector Cutoff Current (VCE = 1.0 Vdc, VBE = 0 Vdc) 10 20 Value Typ.

Overview

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER.

Key Features

  • Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure.
  • 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package.
  • Macro X.