MRF951 transistors equivalent, rf & microwave discrete low power transistors.
*
*
*
* Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure
– 1.3dB @ 1GH.
Designed for use in high gain, low noise small-signal amplifiers.
DataSheet4U.com
ee DataSh
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector .
Image gallery
Download