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MRF951 - NPN Transistor

General Description

The ASI MRF951 is Designed for high gain.

Low noise small-signal amplifiers.

Applications up to 2.0 GHz.

Key Features

  • Low Noise Figure.
  • High Gain.
  • Omnigold™ Metalization System.

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Datasheet Details

Part number MRF951
Manufacturer ASI
File Size 21.88 KB
Description NPN Transistor
Datasheet download datasheet MRF951 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF951 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF951 is Designed for high gain. Low noise small-signal amplifiers. Applications up to 2.0 GHz. FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System MAXIMUM RATINGS IC 100 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C θJC 100 °C/W PACKAGE STYLE Dim. Are in mm Leads 1 and 3 = Emitter 2 = Collector 4 = Base CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCBO IC = 0.1 mA BVCEO IC = 0.1 mA ICBO VCB = 10 V IEBO VEB = 1.0 V hFE VCE = 6.0 V IC = 5.0 mA MINIMUM TYPICAL MAXIMUM 20 10 0.1 0.1 50 200 UNITS V V µA µA --- Ccb VCB = 10 V f = 1.0 MHz 0.45 pF GNF NF50Ω VCE = 6.0 V VCE = 6.0 V IC = 5.0 mA IC = 5.0 mA f = 1.